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ARTICLE
Year : 2012  |  Volume : 58  |  Issue : 3  |  Page : 226-229

Enhanced Non-quasi-static Lauritzen Diode Model


1 Characterization and Modeling, ON Design Czech S. R. O. Brno, Czech Republic
2 Design Engineer, ON Design, Czech S. R. O. Brno, Czech Republic

Correspondence Address:
Lenka Sochová
Characterization and Modeling, ON Design Czech S. R. O. Brno
Czech Republic
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DOI: 10.4103/0377-2063.97332

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This paper deals with enhancement of a PN diode standard model toward including substrate PN junction, and reverse recovery effect models. This leads to improvement in power management, EMC, and switching application design.


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