| ARTICLE |
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| Year : 2012 | Volume
: 58
| Issue : 3 | Page : 226-229 |
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Enhanced Non-quasi-static Lauritzen Diode Model
Lenka Sochová1, Petr Beták1, Ján Plojhár2
1 Characterization and Modeling, ON Design Czech S. R. O. Brno, Czech Republic 2 Design Engineer, ON Design, Czech S. R. O. Brno, Czech Republic
Correspondence Address:
Lenka Sochová Characterization and Modeling, ON Design Czech S. R. O. Brno Czech Republic
 DOI: 10.4103/0377-2063.97332
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This paper deals with enhancement of a PN diode standard model toward including substrate PN junction, and reverse recovery effect models. This leads to improvement in power management, EMC, and switching application design. |
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| [FULL TEXT] [PDF]* |
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