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| Year : 2012 | Volume
: 58
| Issue : 3 | Page : 237-242 |
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Extraction of Scalable Electrical Model for HV (600/800 V) MOS Transistors
Lorenzo Labate, Simona Angela Cozzi, Roberto Stella
Technology R&D Smart Power & High Voltage Group, STMicroelectronics, 20010 Cornaredo, Via Tolomeo, MI, Italy
Correspondence Address:
Lorenzo Labate
Technology R&D Smart Power & High Voltage Group, STMicroelectronics, 20010 Cornaredo, Via Tolomeo, MI
Italy
 DOI: 10.4103/0377-2063.97333
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Many applications affecting our daily life require devices that can reach very high voltages. These applications are generally controlled by a logic shifted up to, for example, 600 V with respect to the ground. The device adopted in order to let high-voltage world talk with low-voltage logic is a level shifter, here nicknamed "Mickey Mouse" due to its particular shape. Since it can be composed by several elements, such as linear, curved, and ball-shaped transistors (ears of "Mickey Mouse"), the model has to take into account the scalability of the device in terms of linear width, number of curves, and number of ears. Extraction strategy and methodology used to achieve an accurate model will be presented in this work. |
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